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Deep ultraviolet light emitting diodes using AlGaN quantum well active regionASIF KHAN, M; SHATALOV, Maxim; ADIVARAHAN, Vinod et al.Proceedings - Electrochemical Society. 2003, pp 152-157, issn 0161-6374, isbn 1-56677-349-0, 6 p.Conference Paper

Reliability of AlGaN-based deep UV LEDs on sapphireSHATALOV, Maxim; ZHENG GONG; GAEVSKI, Mikhail et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 61340P.1-61340P.11, issn 0277-786X, isbn 0-8194-6176-8, 1VolConference Paper

Non-catalyst growth and characterization of a-plane AlGaN nanorodsGAEVSKI, Mikhail E; WENHONG SUN; JINWEI YANG et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 7, pp 1696-1699, issn 1862-6300, 4 p.Conference Paper

255 nm interconnected micro-pixel deep ultraviolet light emitting diodesASIF KHAN, M; SHUAI WU; WENHONG SUN et al.International Electron Devices Meeting. 2004, pp 347-350, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

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